Weak solutions to isothermal hydrodynamic model for semiconductor devices

The Quantum Hydrodynamic Model for Semiconductor Devices

A Thermal-Fully Hydrodynamic Model for Semiconductor Devices and Applications to III–V HBT Simulation

Because of the interaction between self-heating and hot carriers effects, neither isothermal nor conventional macrothermal models are adequate for the simulation of state-of-the-art power devices; instead, a detailed electro-thermal model accounting for nonstationary transport, such as the Thermal-Fully Hydrodynamic (T-FH) model, is required. We apply a one-dimensional (1-D) implementation of s...

Qualitative Behavior of Weak Solutions of the Drift Diiusion Model for Semiconductor Devices Coupled with Maxwell S Equations

The transient drift-diiusion model describing the charge transport in semiconductors is considered. Poisson's equation, which is usually used, is replaced by Maxwell's equations. The diiusion-and mobility-coeecients and the dielectric and magnetic susceptibilities may depend on the space-variables. Global existence and convergence to the thermal equilibrium is shown.

Qualitative behavior of weak solutions of the drift di usion model for semiconductor devices coupled with Maxwell s equations

The transient drift di usion model describing the charge transport in semiconductors is con sidered Poisson s equation which is usually used is replaced by Maxwell s equations The di usion and mobility coe cients and the dielectric and magnetic susceptibilities may depend on the space variables Global existence and convergence to the thermal equilibrium is shown

Numerical Simulation of the Smooth Quantum Hydrodynamic Model for Semiconductor Devices

An extension of the classical hydrodynamic model for semiconductor devices to include quantum transport e€ects is reviewed. This ``smooth'' quantum hydrodynamic (QHD) model is derived speci®cally to handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. A conservative upwind discretiz...